Frequently used abbreviations of sensor technologies at a glance

In this chapter you will find abbreviations of all fields in alphabetic sequence: electronical, optical and detectors. All abbreviations are also listed in their respective chapters.

AC

In alternating current (AC) the movement of electric charges periodically reverses direction.

ADC

Analog-to-digital converter.

AOI

Angle Of Incidence, see figure.

ARC

Anti-reflection coating is a single or multi layer coating without filter function to improve transmittance of windows or filters.

Beam splitter design

Multi-color detectors with common cap hole for all spectral channels and internal splitting into two or four channels.

Buttonhole design

Multi-color detectors with one cap hole per spectral channel each.

CM

Current mode, an operation mode of pyroelectric detectors, especially used in types with integrated operational amplifier, like the LME-335.

CMOS

Complementary metal-oxide-semiconductor: A technology for constructing integrated circuits.

Cut-on/Cut-off

This is a possible form of specification of the NBP, it is the wavelength at 5% or 50% of peak transmission on both flanks (left side Cut-on, right side Cut-off).

CWL

Center wavelength is the center of the pass band of a band pass filter, see figure.

D* / D-Star

Specific Detectivity: Figure of merit used to characterize performance, equal to the reciprocal of noise equivalent power (NEP), normalized to square root of unit area and unit bandwidth, see figure.

DC

In direct current (DC), the flow of electric charge is only in one direction.

ESD

Electrostatic discharge: Through improper handling the ESD can cause detector damage.

FOV

Here: Field of view of IR detector. It is mostly limited by the detector's aperture hole, see figure.

FPF

Fabry-Pérot filter

FSR

Free spectral range: the spacing in optical frequency or wavelength between two successive reflected or transmitted optical intensity maxima or minima of an interferometer.

FWHM

Full width half measure: Another vocable for HPBW.

HPBW

Half power Bandwidth: Bandwidth at 50% of peak transmittance, see figure.

IR

Infrared: radiation with a wavelength between (0.78 and 1,000) µm.

JFET

Junction field effect transistor: special low current and voltage noise transistor for impedance transformation.

Detectors

  • LIE: LiTaO3 & InfraTec & Einelementig (single element)
  • LIM: LiTaO3 & InfraTec & Multi color
  • LME: LiTaO3 & low Microphonic effect & Einelementig (single element)
  • LMM: LiTaO3 & low Microphonic effect & Multi color
  • LFP: LiTaO3 & Fabry-Pérot
  • PIA: PZT & InfraTec & Array
  • TFP: Tunable Fabry-Pérot 

LWP

Long Wave Pass is a filter with cut-on wavelength but no specification of cut-off. All wavelength longer than cut-on are able to pass, all wavelengths below are blocked. Opposite from SWP (Short Wave Pass), see figure.

MIR

Mid Infrared, radiation with a wavelength between (3 and 50) µm.

MOEMS

Micro-Opto-Electro-Mechanical Systems: A special kind of Micro-Electro-Mechanical Systems (MEMS) merged with Micro-optics.

MTTF

Mean time to failure, which measures average time to failures with the modeling assumption that the failed system is not repaired. For InfraTec’s single and dual channel detectors the MTTF amounts more than 300 years, for quad channel detectors about 100 years.

NBP

Narrow Band Pass is a band pass filter with a bandwidth of < 10% of the center wavelength, see figure.

NDIR

Non Dispersive Infrared Radiation.

NEP

Noise equivalent power: At a given modulation frequency, operating wavelength and effective noise bandwidth, the NEP is the radiant power that produces a signal-to-noise ratio of unity at the output of the optical detector.

Note: Some manufacturers and authors define NEP as the minimum detectable power per square root bandwidth. When defined this way, NEP has the units of watts per (hertz)1/2. Therefore, the term is a misnomer, because the units of power are watts.

NIR

Near Infrared: Radiation with a wavelength between (0.78 and 3) µm.

OpAmp

Operational amplifier.

Pyromid

Brandmark of InfraTec for state-of-the-art multi-color detectors in buttonhole and beam splitter design.

Rc

Current responivity: short-circuit current of pyroelectric element divided by incident radiant power.

Rv

Voltage responsivity: output signal voltage divided by incident radiant power.

SNR

Signal-to-noise-ratio.

TC

Temperature coefficient [%/K or ppm/K].

TO

Transistor Outline: Specifies a transistor's package, see figure.

urn -> Un

Voltage noise normalized at 1Hz bandwidth, also known as noise density.

UV

Ultraviolet (radiation), see figure

VIS

Human visible radiation with a wavelength between (0.38 and 0.78) µm.

VM

Voltage mode, a conventional operation mode of pyroelectric detectors, for example used in LIE-302.

WBP

Wide Band Pass is a band pass filter with a bandwidth of > 10 % of the center wavelength, see figure.

Contact

Headquarters:

InfraTec GmbH
Infrarotsensorik und Messtechnik
Dresden, GERMANY
workPhone:+49 351 871-8625

Branch offices:

InfraTec infrared LLC
Plano, TX 75024
workPhone:+1 877 797 6748

www.InfraTec-infrared.com

InfraTec infrared Ltd
Chesterfield, UK
workPhone:+44 1246 267562

InfraTec Representative for PR of China
c/o German Industry & Commerce
Greater China
Shanghai, PR of China

workPhone:+8621 68758536 ext 1633

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